Invention Grant
- Patent Title: Quantum rod light emitting diode device
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Application No.: US16617097Application Date: 2019-11-13
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Publication No.: US11437543B2Publication Date: 2022-09-06
- Inventor: Lixuan Chen
- Applicant: TCL China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Guangdong
- Agency: Taft Stettinius & Hollister LLP
- Priority: CN201910445031.0 20190527
- International Application: PCT/CN2019/117758 WO 20191113
- International Announcement: WO2020/238055 WO 20201203
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/08 ; H01L33/28 ; H01L51/50

Abstract:
The present invention discloses a quantum rod light emitting diode device, including a substrate, and a cathode, an electron functional layer, a light emitting layer, a hole functional layer and an anode sequentially stacked on the substrate. The light emitting layer includes quantum rods disposed therein. The quantum rods are oriented along a same direction. The light emitting layer of the quantum rod light emitting diode device of the present invention include the oriented quantum rods to change incident light into polarized light, which enhances transmittance of polarized light.
Public/Granted literature
- US20210336077A1 QUANTUM ROD LIGHT EMITTING DIODE DEVICE Public/Granted day:2021-10-28
Information query
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