- 专利标题： Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystal
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申请号： US16859160申请日： 2020-04-27
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公开(公告)号： US11443944B2公开(公告)日： 2022-09-13
- 发明人: Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto , Daisuke Tahara
- 申请人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto , Daisuke Tahara
- 申请人地址： JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- 专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Masahiro Yoshimoto,Daisuke Tahara
- 当前专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Masahiro Yoshimoto,Daisuke Tahara
- 当前专利权人地址： JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- 代理机构： Sughrue Mion, PLLC
- 优先权： JPJP2019-092449 20190515
- 主分类号： H01L21/16
- IPC分类号： H01L21/16 ; H01L21/02
摘要：
A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.