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公开(公告)号：US20200273954A1
公开(公告)日：2020-08-27
申请号：US16750739
申请日：2020-01-23
摘要： A switching element may include: a gallium oxide substrate constituted of a gallium oxide crystal; and a plurality of gate electrodes facing the gallium oxide substrate via a gate insulating films. An upper surface of the gallium oxide substrate is parallel to a (010) plane of the gallium oxide crystal, and in a plan view of the upper surface of the gallium oxide substrate, a longitudinal direction of each gate electrode intersects a direction along which a (100) plane of the gallium oxide crystal extends.
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公开(公告)号：US20200273951A1
公开(公告)日：2020-08-27
申请号：US16784907
申请日：2020-02-07
IPC分类号： H01L29/06 , H01L29/24 , H01L29/861 , H01L29/872 , H01L21/784
摘要： A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.
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公开(公告)号：US11515146B2
公开(公告)日：2022-11-29
申请号：US16697273
申请日：2019-11-27
IPC分类号： H01L21/02
摘要： A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.
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公开(公告)号：US11280023B2
公开(公告)日：2022-03-22
申请号：US16736886
申请日：2020-01-08
摘要： A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
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公开(公告)号：US20200240038A1
公开(公告)日：2020-07-30
申请号：US16736886
申请日：2020-01-08
摘要： A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
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公开(公告)号：US11424322B2
公开(公告)日：2022-08-23
申请号：US16784907
申请日：2020-02-07
IPC分类号： H01L29/06 , H01L29/24 , H01L21/784 , H01L29/872 , H01L29/861
摘要： A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.
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公开(公告)号：US11270882B2
公开(公告)日：2022-03-08
申请号：US16741060
申请日：2020-01-13
摘要： A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.
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8.发明申请公开(公告)号：US20200376515A1
公开(公告)日：2020-12-03
申请号：US15931968
申请日：2020-05-14
摘要： A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.
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公开(公告)号：US20200027731A1
公开(公告)日：2020-01-23
申请号：US16512447
申请日：2019-07-16
摘要： A film forming method of forming a gallium oxide film doped with tin on a substrate is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin chloride (IV) pentahydrate are dissolved in the solution.
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10.发明授权公开(公告)号：US11534791B2
公开(公告)日：2022-12-27
申请号：US15931968
申请日：2020-05-14
摘要： A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.
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