Invention Grant
- Patent Title: Hybrid microelectronic substrate and methods for fabricating the same
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Application No.: US16918900Application Date: 2020-07-01
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Publication No.: US11444033B2Publication Date: 2022-09-13
- Inventor: Robert Starkston , Robert L. Sankman , Scott M. Mokler , Richard C. Stamey
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP.
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/683 ; H01L21/48 ; H01L23/498 ; H01L25/065

Abstract:
A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.
Public/Granted literature
- US20200335444A1 HYBRID MICROELECTRONIC SUBSTRATE AND METHODS FOR FABRICATING THE SAME Public/Granted day:2020-10-22
Information query
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