Invention Grant
- Patent Title: Memory device, data outputting method thereof, and memory system having the same
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Application No.: US17356687Application Date: 2021-06-24
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Publication No.: US11449274B2Publication Date: 2022-09-20
- Inventor: Byungsuk Woo , Changkyu Seol , Sucheol Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2020-0173059 20201211
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory device includes: a memory cell array; a data selector configured to receive data from the memory cell array, and to output the received data as first sub-data and second sub-data; a cyclic redundancy check (CRC) generator configured to generate first CRC values corresponding to the first sub-data, and to generate second CRC values corresponding to the second sub-data; a CRC selector configured to determine an order of the first CRC values and the second CRC values, and to output one of the first CRC values and one of the second CRC values according to the determined order; and a transmitter configured to receive the first CRC values and the second CRC values according to the determined order, and to transmit CRC values of the data by a multilevel signaling method.
Public/Granted literature
- US20220188013A1 MEMORY DEVICE, DATA OUTPUTING METHOD THEREOF, AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2022-06-16
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