Invention Grant
- Patent Title: Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion
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Application No.: US16702905Application Date: 2019-12-04
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Publication No.: US11453957B2Publication Date: 2022-09-27
- Inventor: Rimpei Kindaichi , Yoshishige Okuno , Tomohiro Shonai
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2018-230183 20181207
- Main IPC: C30B35/00
- IPC: C30B35/00 ; C30B23/06 ; C23C14/24 ; C23C14/06 ; C30B29/36

Abstract:
A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.
Public/Granted literature
- US20200181797A1 CRYSTAL GROWING APPARATUS AND CRUCIBLE Public/Granted day:2020-06-11
Information query
IPC分类: