公开(公告)号：US20230133485A1

公开(公告)日：2023-05-04

申请号：US18048982

申请日：2022-10-24

申请人： SHOWA DENKO K.K.

发明人： Hiromitsu Tanuma ,  Shinichi Nakayama ,  Nor Razali Rohman Mumod Ali ,  Kok Sheng Lim

IPC分类号： C23C16/509

摘要： An electrode filament connection member configured to be attached so as to pass through an outer wall of a chemical vapor deposition apparatus in which an electrode filament is disposed in a chamber is provided, and to form an electrical connection between a wire from a power source and the electrode filament. The electrode filament connection member includes a head portion attached to the electrode filament, and a rod portion that extends through the outer wall and is connected to the wire. The head portion includes an electrode filament attachment portion at a tip end portion, and a side surface that is parallel to an axial direction or is gradually widened from the tip end portion toward the outer wall. An outer shape of the side surface of the head portion conforms to an outer shape of the electrode filament connection member when viewed in projection along the axial direction.

公开(公告)号：US20230120626A1

公开(公告)日：2023-04-20

申请号：US17788125

申请日：2020-12-16

申请人： SHOWA DENKO K.K.

发明人： Naoya FUKUMOTO ,  Tsuyoshi KATO ,  Katsumi MUROFUSHI ,  Daisuke YAGYU ,  Masaki NANKO ,  Natsumi SHIBATA

IPC分类号： C10M105/72 ,  C10M105/56 ,  C07C43/13 ,  G11B5/725

摘要： There is provided a fluorine-containing ether compound represented by the following formula. R1—R2—CH2—R3—CH2—OCH2CH(OH)CH2O—CH2—R3—CH2—R4—R5 (in the formula, R3 represents a perfluoropolyether chain; R2 and R4 represent a divalent linking group having a polar group and may be the same or different from each other; R1 and R5 represent a terminal group bonded to an oxygen atom of R2 or R4 and may be the same or different from each other; and at least one of R1 and R5 is an organic group having 1 to 8 carbon atoms and at least one of hydrogens included in the organic group is substituted by a cyano group).

公开(公告)号：US11600538B2

公开(公告)日：2023-03-07

申请号：US17456506

申请日：2021-11-24

申请人： SHOWA DENKO K.K.

发明人： Naoto Ishibashi ,  Koichi Murata ,  Hidekazu Tsuchida

IPC分类号： H01L21/02 ,  H01L21/66 ,  C23C16/32

摘要： A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

公开(公告)号：US20230059734A1

公开(公告)日：2023-02-23

申请号：US17587499

申请日：2022-01-28

申请人： SHOWA DENKO K.K.

发明人： Sho TONEGAWA ,  Akira SAKAWAKI ,  Daizo ENDO ,  Kota HASEGAWA

IPC分类号： H03H9/17 ,  H01L41/047 ,  H03H9/02

摘要： A piezoelectric film including a piezoelectric body configured to extract radio waves of a required frequency by resonance is provided. The piezoelectric body is based on either of ScAlN or AlN, and an X-ray rocking curve full-width at half-maximum (FWHM) of the piezoelectric body in a lattice plane with a Miller index of (11-20) is not more than 10°.

公开(公告)号：US20230059522A1

公开(公告)日：2023-02-23

申请号：US17790643

申请日：2021-01-05

申请人： SHOWA DENKO K.K.

发明人： Ichiro SAGAE ,  Noriko OGAWA

IPC分类号： C08F36/18 ,  C08K5/37 ,  C08K3/22

摘要： The present invention relates to a latex composition, a molded body, and a method for producing a molded body, and the latex composition includes a chloroprene polymer (A), and a thiol compound (B) having 2 or more mercapto groups in a molecule.

公开(公告)号：US20230055999A1

公开(公告)日：2023-02-23

申请号：US17981138

申请日：2022-11-04

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka Nishihara ,  Keisuke Fukada

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/36 ,  C30B25/02 ,  C30B29/36 ,  C30B25/20

摘要： A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

公开(公告)号：US11588148B2

公开(公告)日：2023-02-21

申请号：US15538698

申请日：2015-10-15

申请人： Umicore ,  Showa Denko K.K.

发明人： Stijn Put ,  Dirk Van Genechten ,  Jan Gilleir ,  Nicolas Marx ,  Arihiro Muto ,  Nobuaki Ishii ,  Masataka Takeuchi

IPC分类号： H01M4/36 ,  H01M4/38 ,  H01M4/134 ,  C01B33/03 ,  C01B32/00 ,  C01B33/027 ,  H01M10/0525

摘要： Powder comprising particles comprising a matrix material and silicon-based domains dispersed in this matrix material, whereby the matrix material is carbon or a material that can be thermally decomposed to carbon, whereby either part of the silicon-based domains are present in the form of agglomerates of silicon-based domains whereby at least 98% of these agglomerates have a maximum size of 3 μm or less, or the silicon-based domains are not at all agglomerated into agglomerates.

公开(公告)号：US11584821B2

公开(公告)日：2023-02-21

申请号：US17266847

申请日：2019-07-11

申请人： SHOWA DENKO K.K.

发明人： Hiroki Kuramoto ,  Kenichi Nakanishi ,  Shohei Nishizawa ,  Yoshishige Okuno

IPC分类号： C08G18/00 ,  C07F9/50 ,  C09J175/02 ,  C08G18/79 ,  C08K5/50 ,  C08G59/40 ,  C08G18/76 ,  C08G18/72 ,  C09J163/00 ,  C08G18/73 ,  C08G18/18 ,  C08G18/16 ,  C08G18/75 ,  C08G18/02 ,  C08K5/5397

摘要： A polyisocyanurate raw material composition containing a polyfunctional isocyanate, a compound (I) represented by general formula (I) shown below, and an epoxy compound. In general formula (I), each of R1 to R5 represents a hydrogen atom, an alkoxy group of 1 to 10 carbon atoms, an alkyl group of 2 to 10 carbon atoms (or an alkyl group of 1 to 10 carbon atoms in the case of R3 to R5), an aryl group of 6 to 12 carbon atoms, an amino group, a monoalkylamino group of 1 to 10 carbon atoms, a dialkylamino group of 2 to 20 carbon atoms, a carboxy group, a cyano group, a fluoroalkyl group of 1 to 10 carbon atoms, or a halogen atom (provide that R1 and R2 are not both hydrogen atoms).

公开(公告)号：US20230046460A1

公开(公告)日：2023-02-16

申请号：US17785735

申请日：2020-12-18

申请人： SHOWA DENKO K.K.

发明人： Yasunao MIYAMURA ,  Yasushi KADOWAKI ,  Kuniaki YAMATAKE ,  Masanao HARA ,  Shigeru YAMAKI ,  Hideki OHATA

IPC分类号： C08K3/08 ,  C08K7/06 ,  C08J5/18 ,  C08L33/26 ,  C08L35/00 ,  C08L61/02

摘要： In a method for producing a high-molecular-weight polymer sheet, when a monomer composition including silver nanowires is polymerized, the monomer composition is allowed to stand in a state in which a thickness direction of the obtained high-molecular-weight polymer sheet before the polymerization is a vertical direction, and the silver nanowires in the monomer composition are oriented in the vertical direction and polymerized.

公开(公告)号：US20230039660A1

公开(公告)日：2023-02-09

申请号：US17879118

申请日：2022-08-02

申请人： SHOWA DENKO K.K.

发明人： Kensho TANAKA ,  Yoshikazu Umeta

IPC分类号： H01L29/16 ,  H01L21/02

摘要： A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron in the center of the epitaxial layer is less than 5.0×1012 cm−3.