Invention Grant
- Patent Title: Semiconductor device including metal interconnections having sidewall spacers thereon, and method for fabricating the same
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Application No.: US16518928Application Date: 2019-07-22
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Publication No.: US11456207B2Publication Date: 2022-09-27
- Inventor: Ching-Chih Chang , Yuan-Fu Ko , Chih-Sheng Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW108121622 20190621
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L21/02 ; H01L23/532
Abstract:
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the first metal interconnection; forming a second IMD layer on the spacer and the first metal interconnection; and forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.
Information query
IPC分类:
