Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17001933Application Date: 2020-08-25
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Publication No.: US11456250B2Publication Date: 2022-09-27
- Inventor: Takao Sueyama , Yosuke Komori
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-035964 20200303
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/528 ; H01L27/088 ; H01L23/532

Abstract:
A semiconductor device according to the present embodiment comprises a first metallic line. The first metallic line is provided above a substrate and extends in a first direction with a first width. At least one second metallic line is connected to the first metallic line and extends in a second direction from the first metallic line with a second width that is smaller than the first width. A dummy metallic line is arranged adjacently to the at least one second metallic line, connected to the first metallic line, and extends in the second direction from the first metallic line. The dummy metallic line is not electrically connected to lines other than the first metallic line.
Public/Granted literature
- US20210280508A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-09
Information query
IPC分类: