Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US16872147Application Date: 2020-05-11
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Publication No.: US11456253B2Publication Date: 2022-09-27
- Inventor: Shigeru Sugioka , Hidenori Yamaguchi , Noriaki Fujiki , Keizo Kawakita , Raj K. Bansal
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L29/06 ; H01L23/498 ; H01L23/538
Abstract:
A semiconductor device includes a main circuit region; and a scribe region surrounding the main circuit region; wherein the main circuit region and the scribe region comprises first and second insulating films and a low-k film formed therebetween; and wherein the low-k film of the scribe region includes a plurality of cavities lining along a border between the main circuit region and the scribe region.
Public/Granted literature
- US20210351133A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2021-11-11
Information query
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