Invention Grant
- Patent Title: Thin film transistor, manufacturing method thereof, array substrate and electronic device
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Application No.: US16468760Application Date: 2018-12-14
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Publication No.: US11456386B2Publication Date: 2022-09-27
- Inventor: Nini Bai , Liangliang Liu , Liang Tang
- Applicant: ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Inner Mongolia; CN Beijing
- Assignee: ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Inner Mongolia; CN Beijing
- Agency: Leason Ellis LLP
- Priority: CN201810163942.X 20180227
- International Application: PCT/CN2018/121115 WO 20181214
- International Announcement: WO2019/165824 WO 20190906
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/417
Abstract:
A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device are disclosed. The manufacturing method of the thin film transistor includes: forming an active layer pattern on a base substrate; forming a gate insulating layer on the active layer pattern; the gate insulating layer includes a first portion, a second portion and a third portion, the third portion is on both sides of the first portion, the second portion is between the first portion and the third portion on at least one side, and the thickness of the second portion is larger than that of the third portion.
Public/Granted literature
- US20210359138A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND ELECTRONIC DEVICE Public/Granted day:2021-11-18
Information query
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