Thin film transistor, method for fabricating the same, and OLED display panel

    公开(公告)号:US10566456B2

    公开(公告)日:2020-02-18

    申请号:US15979635

    申请日:2018-05-15

    摘要: The disclosure discloses a thin film transistor, a method for fabricating the same, and an OLED display panel. The method for fabricating a thin film transistor includes: forming a poly-silicon layer and a gate insulation layer on a base substrate in that order; forming a pattern of a gate above the base substrate with the gate insulation layer in a patterning process; doping the base substrate with the pattern of the gate for the first time; forming a pattern of first photoresist on the base substrate doped for the first time, using a mask for forming the pattern of the gate, wherein the pattern of the first photoresist covers the pattern of the gate and an area for forming a lightly doped drain area; and doping the base substrate with the pattern of the first photoresist for the second time to form a pattern of an active layer.

    Mask plate
    6.
    发明授权

    公开(公告)号:US10209616B2

    公开(公告)日:2019-02-19

    申请号:US15193992

    申请日:2016-06-27

    IPC分类号: G03F1/38 G03F1/52 G03F7/20

    摘要: The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.