- 专利标题: Protective circuit for a field-effect transistor
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申请号: US16758145申请日: 2017-10-23
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公开(公告)号: US11456588B2公开(公告)日: 2022-09-27
- 发明人: Roman Liebsch
- 申请人: GKN Automotive Ltd.
- 申请人地址: GB Birmingham
- 专利权人: GKN Automotive Ltd.
- 当前专利权人: GKN Automotive Ltd.
- 当前专利权人地址: GB Birmingham
- 代理机构: Bejin Bieneman PLC
- 国际申请: PCT/EP2017/076970 WO 20171023
- 国际公布: WO2019/080989 WO 20190502
- 主分类号: H02H3/08
- IPC分类号: H02H3/08 ; B60R16/02 ; G01R31/00 ; G01R31/327 ; H02H1/00
摘要:
A protective circuit includes a first field-effect transistor having a first drain terminal, a first source terminal and a first gate terminal, a control device by which an electrical first voltage between the first drain terminal and the first source terminal can be determined, and a first temperature sensor by which a first temperature of the first field-effect transistor can be detected, wherein a first resistance of the first field effect transistor and an electrical first current conducted via the first field-effect transistor can be determined by the control device based on the first temperature.
公开/授权文献
- US20200287371A1 PROTECTIVE CIRCUIT FOR A FIELD-EFFECT TRANSISTOR 公开/授权日:2020-09-10
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