PROTECTIVE CIRCUIT FOR A FIELD-EFFECT TRANSISTOR

    公开(公告)号:US20200287371A1

    公开(公告)日:2020-09-10

    申请号:US16758145

    申请日:2017-10-23

    Inventor: Roman Liebsch

    Abstract: A protective circuit includes a first field-effect transistor having a first drain terminal, a first source terminal and a first gate terminal, a control device by which an electrical first voltage between the first drain terminal and the first source terminal can be determined, and a first temperature sensor by which a first temperature of the first field-effect transistor can be detected, wherein a first resistance of the first field effect transistor and an electrical first current conducted via the first field-effect transistor can be determined by the control device based on the first temperature.

    Protective circuit for a field-effect transistor

    公开(公告)号:US11456588B2

    公开(公告)日:2022-09-27

    申请号:US16758145

    申请日:2017-10-23

    Inventor: Roman Liebsch

    Abstract: A protective circuit includes a first field-effect transistor having a first drain terminal, a first source terminal and a first gate terminal, a control device by which an electrical first voltage between the first drain terminal and the first source terminal can be determined, and a first temperature sensor by which a first temperature of the first field-effect transistor can be detected, wherein a first resistance of the first field effect transistor and an electrical first current conducted via the first field-effect transistor can be determined by the control device based on the first temperature.

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