The low end operating voltage of an integrated circuit is adjusted. Oscillations are counted at a ring oscillator on the integrated circuit over a designated period of clock cycles. Based on the number of oscillations, a prediction model associated with a first set of device degradation data and a second set of static random-access memory (SRAM) low end operating voltage data is used to select a low end operating voltage limit for a processor on the integrated circuit. The low end operating voltage of the processor is set based on the selected low end operating voltage limit. These steps are repeated multiple times during operation of the processor. A method of testing integrated circuits to provide the data employed to produce the prediction model is also provided.