Techniques are disclosed that enable independent control of interconnect lines and line end structures using a single mask. The techniques provided are particularly useful, for instance, where single mask lithography processes limit the scaling of line end structures. In some embodiments, the techniques can be implemented using a liner body and multiple angled etches of the liner body to provide a line end structure comprised of a remaining portion of the liner body. In such cases, the line end structure material enables an etch rate that is slower than the etch rate of surrounding insulator materials. Furthermore, the line end structure can be of minimal size not attainable using conventional single mask processes. In other embodiments, the techniques can be implemented using a hardmask that includes hardmask features defining lines, and one or more angled etches of the hardmask to provide line end structure(s) of minimal size.