Invention Grant
- Patent Title: Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode
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Application No.: US16704002Application Date: 2019-12-05
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Publication No.: US11462648B2Publication Date: 2022-10-04
- Inventor: Jagar Singh , Srikanth Balaji Samavedam
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/87
- IPC: H01L29/87 ; H01L29/66 ; H01L29/872
Abstract:
One illustrative Schottky diode disclosed herein includes a semiconductor substrate, an anode region and a cathode region. The anode region includes a plurality of first fins with a first vertical height formed in the anode region, wherein an upper surface of the semiconductor substrate is exposed within the anode region. The cathode region includes a plurality of second fins with a second vertical height that is greater than the first vertical height. The device also includes a conductive structure that contacts and engages at least an upper surface of the plurality of first fins in the anode region.
Public/Granted literature
Information query
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