Invention Grant
- Patent Title: Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
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Application No.: US16945283Application Date: 2020-07-31
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Publication No.: US11463087B2Publication Date: 2022-10-04
- Inventor: Alper Genc
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Steinfl + Bruno LLP
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H03K17/76
Abstract:
Methods and devices to mitigate de-biasing caused by an undesired gate induced drain body leakage current in FET switch stacks are disclosed. The devices utilize diode stacks to generate discharge paths for the undesired current. The disclosed teachings are applicable to both shunt and series implementations of FET switch stacks.
Public/Granted literature
- US20220038099A1 METHODS AND DEVICES TO GENERATE GATE INDUCED DRAIN LEAKAGE CURRENT SINK OR SOURCE PATH FOR SWITCH FETS Public/Granted day:2022-02-03
Information query
IPC分类:
