Invention Grant
- Patent Title: EUV light source and apparatus for EUV lithography
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Application No.: US17135768Application Date: 2020-12-28
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Publication No.: US11470710B2Publication Date: 2022-10-11
- Inventor: Wei-Shin Cheng , Han-Lung Chang , Li-Jui Chen , Po-Chung Cheng , Hsiao-Lun Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G05D7/06

Abstract:
A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
Public/Granted literature
- US20210227676A1 EUV LIGHT SOURCE AND APPARATUS FOR EUV LITHOGRAPHY Public/Granted day:2021-07-22
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