- 专利标题: Fabrication of embedded die packaging comprising laser drilled vias
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申请号: US17065886申请日: 2020-10-08
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公开(公告)号: US11476188B2公开(公告)日: 2022-10-18
- 发明人: Cameron McKnight-MacNeil
- 申请人: GaN Systems Inc.
- 申请人地址: CA Ottawa
- 专利权人: GaN Systems Inc.
- 当前专利权人: GaN Systems Inc.
- 当前专利权人地址: CA Ottawa
- 代理机构: Miltons IP/p.i.
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/768 ; H01L21/56 ; H01L23/31
摘要:
Embedded die packaging for semiconductor devices and methods of fabrication wherein conductive vias are provided to interconnect contact areas on the die and package interconnect areas. Before embedding, a protective masking layer is provided selectively on regions of the electrical contact areas where vias are to be formed by laser drilling. The material of the protective masking layer is selected to control absorption properties of surface of the pad metal to reduce absorption of laser energy during laser drilling of micro-vias, thereby mitigating overheating and potential damage to the semiconductor device. The masking layer is resistant to surface treatment of other regions of the electrical contact areas, e.g. to increase surface roughness to promote adhesion of package dielectric.
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