Invention Grant
- Patent Title: Focused ion beam apparatus
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Application No.: US17028488Application Date: 2020-09-22
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Publication No.: US11482398B2Publication Date: 2022-10-25
- Inventor: Haruyuki Ishii , Atsushi Uemoto , Tatsuya Asahata
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holland & Hart LLP
- Priority: JPJP2019-174442 20190925
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01J37/28

Abstract:
The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.
Public/Granted literature
- US20210090849A1 FOCUSED ION BEAM APPARATUS Public/Granted day:2021-03-25
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