Invention Grant
- Patent Title: Super-junction power MOSFET device with improved ruggedness, and method of manufacturing
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Application No.: US16869026Application Date: 2020-05-07
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Publication No.: US11482615B2Publication Date: 2022-10-25
- Inventor: Giuseppe Cina′ , Antonio Giuseppe Grimaldi , Luigi Arcuri
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT102019000006709 20190510
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66
Abstract:
A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.
Information query
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