Invention Grant
- Patent Title: Semiconductor device and reading method
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Application No.: US17320224Application Date: 2021-05-14
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Publication No.: US11488644B2Publication Date: 2022-11-01
- Inventor: Sho Okabe , Makoto Senoo
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: JPJP2020-133183 20200805
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/12
Abstract:
A semiconductor device capable of performing high-speed read or high-reliability read is provided. A reading method of a NAND flash memory includes: pre-charging a sensing node through a voltage-supply node; discharging the sensing node to the voltage-supply node for a prescribed operation; recharging the sensing node by the voltage-supply node after the prescribed operation; and discharging a NAND string and sensing a memory cell.
Information query
