Invention Grant
- Patent Title: Semiconductor device passive thermal management
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Application No.: US15671432Application Date: 2017-08-08
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Publication No.: US11488889B1Publication Date: 2022-11-01
- Inventor: John A. Starkovich , Jesse B. Tice , Vincent Gambin
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: McCracken & Gillen LLC
- Main IPC: H01L23/373
- IPC: H01L23/373

Abstract:
Cubic BAs is used in semiconductors to improve the thermal characteristics of a device. The BAs is used in device layers to improve thermal conductivity. The BAs also provides thermal expansion characteristics that are compatible with other semiconductors and thereby further improves reliability. The substrates of the semiconductors may also include vias that contain BAs. The BAs in the vias may contact the BAs in the device layers. Some vias may have a surface area to volume ratio of greater than 10 to better assist with device heat dissipation.
Information query
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