Invention Grant
- Patent Title: Back side metallization
-
Application No.: US17185605Application Date: 2021-02-25
-
Publication No.: US11488922B2Publication Date: 2022-11-01
- Inventor: Thomas P. Dolbear , Daniel Cavasin , Sanjay Dandia
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/00 ; H01L25/00 ; H01L21/48 ; H01L21/78 ; H01L25/065 ; C23C16/06 ; C23C16/34 ; H01L25/18 ; H01L23/36

Abstract:
An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.
Public/Granted literature
- US20210183805A1 BACK SIDE METALLIZATION Public/Granted day:2021-06-17
Information query
IPC分类: