- 专利标题: Write circuit, non-volatile data storage, method for writing to a plurality of memory cells and method for operating a non-volatile data memory
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申请号: US17188164申请日: 2021-03-01
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公开(公告)号: US11495273B2公开(公告)日: 2022-11-08
- 发明人: Thomas Roehr , Volker Pissors
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Eschweiler & Potashnik, LLC
- 优先权: DE102020105500.5 20200302
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/10 ; G11C7/06
摘要:
A write circuit for writing to a plurality of memory cells of a non-volatile data memory, including a buffer memory forming a single memory element which is configured to buffer a first data value before storing said value in the plurality of non-volatile memory cells of the non-volatile data memory. The write circuit also includes a first write line, by means of which the buffer memory is connected to a first memory cell of the plurality of memory cells, and a second write line, which is different from the first write line and by means of which the buffer memory is connected to a second memory cell of the plurality of memory cells. The write circuit further includes a control circuit configured to concurrently write the first data value in the first memory cell and a second data value which depends on the first data value into the second memory cell, wherein the second data value is complementary to the first data value or is identical to the first data value depending on a selected one of a first option or a second option by the control circuit, respectively.
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