Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17202590Application Date: 2021-03-16
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Publication No.: US11495307B2Publication Date: 2022-11-08
- Inventor: Masato Dome , Kensuke Yamamoto , Masaru Koyanagi , Ryo Fukuda , Junya Matsuno , Kenro Kubota
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-157800 20200918
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/30

Abstract:
According to one embodiment, a semiconductor memory device includes: first and second circuit units, a driver circuit, an input/output pad, first and second power supply pads, and first and second interconnects. The first interconnect is configured to provide coupling between the first circuit unit and the first power supply pad. The second interconnect is configured to provide coupling between the second circuit unit and the first power supply pad and have no electrical coupling to the first interconnect.
Public/Granted literature
- US20220093185A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-03-24
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