Invention Grant
- Patent Title: High Q-factor inductor
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Application No.: US16252618Application Date: 2019-01-19
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Publication No.: US11495382B2Publication Date: 2022-11-08
- Inventor: Mark Elzinga
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H03L7/093 ; H03L7/099 ; H01F41/04 ; H03B5/08

Abstract:
Described is a high Q-factor inductor. The inductor is formed as a unit cell coil, which is copied twice for a dual-coil inductor and copied four times for a quad-coil inductor. For each copy of the unit cell coil, the coil is rotated a subsequent substantially 90 degrees or substantially −90 degrees. The rotation enables the terminals of the inductor to be routed equal-distant to a circuit that is placed in the line of symmetry between the two coils.
Public/Granted literature
- US20200234864A1 HIGH Q-FACTOR INDUCTOR Public/Granted day:2020-07-23
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |