Invention Grant
- Patent Title: Flexible transistors with near-junction heat dissipation
-
Application No.: US16862825Application Date: 2020-04-30
-
Publication No.: US11495512B2Publication Date: 2022-11-08
- Inventor: Zhenqiang Ma , Huilong Zhang , Shaoqin Gong
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L29/66 ; H01L29/778 ; H01L23/522

Abstract:
Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.
Public/Granted literature
- US20210343618A1 FLEXIBLE TRANSISTORS WITH NEAR-JUNCTION HEAT DISSIPATION Public/Granted day:2021-11-04
Information query
IPC分类: