Invention Grant
- Patent Title: Light-emitting element
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Application No.: US16879819Application Date: 2020-05-21
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Publication No.: US11495763B2Publication Date: 2022-11-08
- Inventor: Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2012-025834 20120209
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/00 ; C09K11/02 ; C09K11/06 ; H01L31/0232

Abstract:
Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.
Public/Granted literature
- US20200287151A1 Light-Emitting Element Public/Granted day:2020-09-10
Information query
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