Invention Grant
- Patent Title: Independent control of stacked semiconductor device
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Application No.: US16885850Application Date: 2020-05-28
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Publication No.: US11502199B2Publication Date: 2022-11-15
- Inventor: Chansyun David Yang , Keh-Jeng Chang , Chan-Lon Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L29/66
Abstract:
The present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.
Public/Granted literature
- US20210376137A1 STACKED SEMICONDUCTOR DEVICE Public/Granted day:2021-12-02
Information query
IPC分类:
