Invention Grant
- Patent Title: Back-illuminated semiconductor light detecting device
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Application No.: US17053647Application Date: 2019-04-25
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Publication No.: US11508770B2Publication Date: 2022-11-22
- Inventor: Atsushi Ishida , Takashi Baba , Masanori Okada , Terumasa Nagano
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2018-091623 20180510
- International Application: PCT/JP2019/017678 WO 20190425
- International Announcement: WO2019/216242 WO 20191114
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/359 ; H01L31/107 ; H04N5/351

Abstract:
A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.
Public/Granted literature
- US20210193707A1 BACK-ILLUMINATED SEMICONDUCTOR LIGHT DETECTING DEVICE Public/Granted day:2021-06-24
Information query
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