Invention Grant
- Patent Title: EUV radiation source apparatus for lithography
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Application No.: US17208791Application Date: 2021-03-22
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Publication No.: US11513441B2Publication Date: 2022-11-29
- Inventor: Yu-Chih Chen , Po-Chung Cheng , Li-Jui Chen , Shang-Chieh Chien , Sheng-Kang Yu , Wei-Chun Yen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G03F7/20 ; G02B5/08

Abstract:
An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
Public/Granted literature
- US20210208508A1 EUV RADIATION SOURCE APPARATUS FOR LITHOGRAPHY Public/Granted day:2021-07-08
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