- 专利标题： Method of forming gallium oxide film
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申请号： US16697273申请日： 2019-11-27
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公开(公告)号： US11515146B2公开(公告)日： 2022-11-29
- 发明人: Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto
- 申请人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto
- 申请人地址： JP Nagakute; JP Kyoto; JP Kyoto
- 专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Masahiro Yoshimoto
- 当前专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Masahiro Yoshimoto
- 当前专利权人地址： JP Nagakute; JP Kyoto; JP Kyoto
- 代理机构： Sughrue Mion, PLLC
- 优先权： JPJP2018-235359 20181217
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.
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