Invention Grant
- Patent Title: Method for fabricating a semiconductor package
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Application No.: US16874284Application Date: 2020-05-14
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Publication No.: US11515260B2Publication Date: 2022-11-29
- Inventor: Da Hye Kim , Dong Kyu Kim , Jung-Ho Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0099323 20190814
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L25/16 ; H01L25/00 ; H01L21/683 ; H01L21/48 ; H01L21/56 ; H01L23/31

Abstract:
A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is formed on the etch stop layer and includes a plurality of first wires and a first insulation layer surrounding the plurality of first wires. A first semiconductor chip is formed on the first redistribution layer. A solder ball is formed between the first redistribution layer and the first semiconductor chip. A second carrier substrate is formed on the first semiconductor chip. The first carrier substrate, the release layer, and the etch stop layer are removed. The second carrier substrate is removed.
Public/Granted literature
- US20210050298A1 METHOD FOR FABRICATING A SEMICONDUCTOR PACKAGE Public/Granted day:2021-02-18
Information query
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