Invention Grant
- Patent Title: Depth profiling of semiconductor structures using picosecond ultrasonics
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Application No.: US17068693Application Date: 2020-10-12
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Publication No.: US11519720B2Publication Date: 2022-12-06
- Inventor: Ori Golani , Ido Almog
- Applicant: Applied Materials Israel, Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G01B11/22
- IPC: G01B11/22 ; G01B11/06

Abstract:
Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes obtaining measured signals of the sample and analyzing thereof to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature. The measured signals are obtained by repeatedly: projecting a pump pulse on the sample, thereby producing an acoustic pulse propagating within the target region; Brillouin-scattering a probe pulse off the acoustic pulse within the target region; and detecting a scattered component of the probe pulse to obtain a measured signal. In each repetition the respective probe pulse is scattered off the acoustic pulse at a respective depth within the target region, thereby probing the target region at a plurality of depths. A wavelength of the pump pulse is at least about two times greater than a lateral extent of the lateral structural feature.
Public/Granted literature
- US20220113129A1 DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES USING PICOSECOND ULTRASONICS Public/Granted day:2022-04-14
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