- 专利标题： Defect detection in memory based on active monitoring of read operations
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申请号： US17445392申请日： 2021-08-18
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公开(公告)号： US11520657B1公开(公告)日： 2022-12-06
- 发明人: Zhenlei Shen , Tingjun Xie , Frederick Adi , Wei Wang , Zhenming Zhou
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Lowenstein Sandler LLP
- 主分类号： G06F11/00
- IPC分类号： G06F11/00 ; G06F11/10 ; G06F11/07
摘要：
A first error rate based on a first read operation performed on a memory device is obtained. An individual data unit of the memory device that satisfies a first threshold criterion associated with a defect candidate is determined. A defect verification operation on the individual data unit to obtain a second error rate is performed. The individual data unit that satisfies a second threshold criterion associated with a defect is determined.
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