Invention Grant
- Patent Title: Programming analog neural memory cells in deep learning artificial neural network
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Application No.: US17191392Application Date: 2021-03-03
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Publication No.: US11521683B2Publication Date: 2022-12-06
- Inventor: Hieu Van Tran , Thuan Vu , Stanley Hong , Anh Ly , Vipin Tiwari , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06N3/08 ; H01L27/11521 ; H01L29/788 ; G06N3/04
Abstract:
Numerous embodiments are disclosed for a high voltage generation algorithm and system for generating high voltages necessary for a particular programming operation in analog neural memory used in a deep learning artificial neural network. Compensation measures can be utilized that compensate for changes in voltage or current as the number of cells being programmed changes.
Public/Granted literature
- US20210257026A1 PROGRAMMING ANALOG NEURAL MEMORY CELLS IN DEEP LEARNING ARTIFICIAL NEURAL NETWORK Public/Granted day:2021-08-19
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