发明授权
- 专利标题: Method of manufacturing semiconductor devices and corresponding semiconductor device
-
申请号: US16994049申请日: 2020-08-14
-
公开(公告)号: US11521861B2公开(公告)日: 2022-12-06
- 发明人: Michele Derai , Giovanni Graziosi
- 申请人: STMicroelectronics S.r.l.
- 申请人地址: IT Agrate Brianza
- 专利权人: STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics S.r.l.
- 当前专利权人地址: IT Agrate Brianza
- 代理机构: Crowe & Dunlevy
- 优先权: IT102019000014832 20190816
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/31 ; H01L23/495
摘要:
Semiconductor dice are arranged on a substrate such as a leadframe. Each semiconductor die is provided with electrically-conductive protrusions (such as electroplated pillars or bumps) protruding from the semiconductor die opposite the substrate. Laser direct structuring material is molded onto the substrate to cover the semiconductor dice arranged thereon, with the molding operation leaving a distal end of the electrically-conductive protrusion to be optically detectable at the surface of the laser direct structuring material. Laser beam processing the laser direct structuring material is then performed with laser beam energy applied at positions of the surface of the laser direct structuring material which are located by using the electrically-conductive protrusions optically detectable at the surface of the laser direct structuring material as a spatial reference.