Invention Grant
- Patent Title: Switching device and method of manufacturing such a device
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Application No.: US16709753Application Date: 2019-12-10
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Publication No.: US11532616B2Publication Date: 2022-12-20
- Inventor: Aurelie Arnaud
- Applicant: STMICROELECTRONICS (TOURS) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Agency: Seed Intellectual Property Law Group LLP
- Priority: FR1872694 20181211
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L27/02 ; H01L21/265 ; H01L21/266
Abstract:
The present disclosure concerns a switching device comprising a first phosphorus-doped silicon layer on top of and in contact with a second arsenic-doped silicon layer. The present disclosure also concerns a method of making a switching device that includes forming a phosphorus-doped silicon layer in an arsenic-doped silicon layer.
Public/Granted literature
- US20200185378A1 SWITCHING DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE Public/Granted day:2020-06-11
Information query
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