An integrated circuit (IC) structure and a field plate are disclosed. The IC structure and field plate may find advantageous application with, for example, extended drain metal-oxide semiconductor (EDMOS) transistors. The IC structure includes a transistor including a metal gate structure and a drain extension region extending laterally from partially under the metal gate structure to a drain region. A metal field plate is over the drain extension region. Due to being formed simultaneously as part of a gate-last formation approach, the metal field plate has an upper surface coplanar with an upper surface of the metal gate structure. A field plate contact may be on the metal field plate.