Invention Grant
- Patent Title: Generative structure-property inverse computational co-design of materials
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Application No.: US16799410Application Date: 2020-02-24
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Publication No.: US11537898B2Publication Date: 2022-12-27
- Inventor: Ganesh Hegde , Harsono S. Simka
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06N3/08
- IPC: G06N3/08 ; G06N20/20 ; G06N20/10 ; G06F30/13 ; G06F30/27 ; G06N3/04

Abstract:
A method and a system for material design utilizing machine learning are provided, where the underlying joint distribution p(S,P) of structure (S)-property (P) relationships is explicitly learned simultaneously and is utilized to directly generate samples (S,P) in a single step utilizing generative techniques, without any additional processing steps. The subspace of structures that meet or exceed the target for property P is then identified utilizing conditional generation of the distribution (e.g., p(P)), or through randomly generating a large number of samples (S,P) and filtering (e.g., selecting) those that meet target property criteria.
Public/Granted literature
- US20210103822A1 GENERATIVE STRUCTURE-PROPERTY INVERSE COMPUTATIONAL CO-DESIGN OF MATERIALS Public/Granted day:2021-04-08
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