Invention Grant
- Patent Title: Inrush current limiter and system including the same
-
Application No.: US17229436Application Date: 2021-04-13
-
Publication No.: US11539205B2Publication Date: 2022-12-27
- Inventor: Keunyoung Kim , Hyun Kim , Jaesoon Park , Sunho Choi
- Applicant: Samsung SDI Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2020-0064398 20200528
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H03K17/687

Abstract:
Provided is an inrush current limiter and a system including the same, the inrush current limiter including first and second input nodes for receiving an input voltage from a power source, a first output node and a second output node for being connected with a load, an inrush-current-limiting portion including a transistor connected between the first input node and the first output node, and for turning on the transistor when a voltage level of the input voltage is higher than a first level, and for limiting an inrush current by controlling time until the transistor is turned on after application of the input voltage, a switch connected between a control terminal of the transistor and the second input node, and a mode controller for turning on the switch when the voltage level of the input voltage is lower than a second level that is lower than the first level.
Public/Granted literature
- US11495961B2 Inrush current limiter and system including the same Public/Granted day:2022-11-08
Information query