Invention Grant
- Patent Title: Nonvolatile memory including intermediate buffer and input/output buffer and memory system including the nonvolatile memory
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Application No.: US17332117Application Date: 2021-05-27
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Publication No.: US11543969B2Publication Date: 2023-01-03
- Inventor: Yoshihisa Kojima , Masanobu Shirakawa , Kiyotaka Iwasaki
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-174120 20180918
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
According to one embodiment, there is provided a nonvolatile memory including a memory cell array, as input/output buffer, one or more intermediate buffers, and a control circuit. The memory cell array includes a plurality of pages. Each of the one or more intermediate buffers is electrically connected between the memory cell array and the input/output buffer. The control circuit is configured to store, in a first intermediate buffer, data read through sensing operation from a first page out of the plurality of pages in accordance with a first command that includes a sensing operation instruction and designation of the first intermediate buffer among the one or more intermediate buffers.
Public/Granted literature
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