Invention Grant
- Patent Title: Formation of a Ga-doped SiGe and B/Ga-doped SiGe layers
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Application No.: US17110980Application Date: 2020-12-03
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Publication No.: US11545357B2Publication Date: 2023-01-03
- Inventor: Andriy Hikavyy , Clement Porret
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP19214064 20191206
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; H01L29/78
Abstract:
A method for forming a Ga-doped SiGe layer comprises depositing, in the presence of a C-containing Ga precursor, Ga-doped SiGe on a substrate, thereby forming a first portion of the Ga-doped SiGe layer. The method further comprises depositing, in the absence of the C-containing Ga precursor, SiGe on the first portion, thereby forming a second portion of the Ga-doped SiGe layer.
Public/Granted literature
- US20210175069A1 Formation of a Ga-Doped SiGe and B/Ga-Doped SiGe Layers Public/Granted day:2021-06-10
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