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公开(公告)号：US20210336002A1
公开(公告)日：2021-10-28
申请号：US17240694
申请日：2021-04-26
Applicant: IMEC VZW
Inventor： Roger Loo , Geert Eneman , Clement Porret
IPC: H01L29/06 , H01L29/167 , H01L29/78
Abstract: A semiconductor structure including a semiconductor substrate having a top surface, one or more group IV semiconductor monocrystalline nanostructures, each having a first and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated therefrom by a non-zero distance, each nanostructure having a source structure epitaxially grown on the first extremity and a drain structure epitaxially grown on the second extremity. The epitaxial source and drain structures are made of a group IV semiconductor doped with one or more of Sb and Bi, and optionally one or more of As and P, thereby creating tensile strain in the group IV semiconductor monocrystalline nanostructure.
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公开(公告)号：US11545357B2
公开(公告)日：2023-01-03
申请号：US17110980
申请日：2020-12-03
Applicant: IMEC VZW
Inventor： Andriy Hikavyy , Clement Porret
Abstract: A method for forming a Ga-doped SiGe layer comprises depositing, in the presence of a C-containing Ga precursor, Ga-doped SiGe on a substrate, thereby forming a first portion of the Ga-doped SiGe layer. The method further comprises depositing, in the absence of the C-containing Ga precursor, SiGe on the first portion, thereby forming a second portion of the Ga-doped SiGe layer.
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公开(公告)号：US20210175069A1
公开(公告)日：2021-06-10
申请号：US17110980
申请日：2020-12-03
Applicant: IMEC VZW
Inventor： Andriy Hikavyy , Clement Porret
Abstract: A method for forming a Ga-doped SiGe layer comprises depositing, in the presence of a C-containing Ga precursor, Ga-doped SiGe on a substrate, thereby forming a first portion of the Ga-doped SiGe layer. The method further comprises depositing, in the absence of the C-containing Ga precursor, SiGe on the first portion, thereby forming a second portion of the Ga-doped SiGe layer.
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