Invention Grant
- Patent Title: Tapered memory cell profiles
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Application No.: US17100185Application Date: 2020-11-20
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Publication No.: US11545625B2Publication Date: 2023-01-03
- Inventor: Agostino Pirovano , Kolya Yastrebenetsky , Fabio Pellizzer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24

Abstract:
Methods, systems, and devices for tapered memory cell profiles are described. A tapered profile memory cell may mitigate shorts in adjacent word lines, which may be leveraged for accurately reading a stored value of the memory cell. The memory device may include a self-selecting memory component with a bottom surface and a top surface opposite the bottom surface. In some cases, the self-selecting memory component may taper from the bottom surface to the top surface. In other examples, the self-selecting memory component may taper from the top surface to the bottom surface. The top surface of the self-selecting memory component may be coupled to a top electrode, and the bottom surface of the self-selecting memory component may be coupled to a bottom electrode.
Public/Granted literature
- US20210151673A1 TAPERED MEMORY CELL PROFILES Public/Granted day:2021-05-20
Information query
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