- 专利标题： Power storage system with integrally formed voltage detecting field effect transistor and manufacturing method thereof
-
申请号： US16750169申请日： 2020-01-23
-
公开(公告)号： US11545700B2公开(公告)日： 2023-01-03
- 发明人: Hiromichi Kuriyama , Masami Takai , Satoshi Nakajima , Eiko Suzuki , Toru Ushirogochi
- 申请人： Hiromichi Kuriyama , Masami Takai , Satoshi Nakajima , Eiko Suzuki , Toru Ushirogochi
- 申请人地址： JP Kanagawa; JP Tokyo; JP Tokyo; JP Kanagawa; JP Kanagawa
- 专利权人： Hiromichi Kuriyama,Masami Takai,Satoshi Nakajima,Eiko Suzuki,Toru Ushirogochi
- 当前专利权人： Hiromichi Kuriyama,Masami Takai,Satoshi Nakajima,Eiko Suzuki,Toru Ushirogochi
- 当前专利权人地址： JP Kanagawa; JP Tokyo; JP Tokyo; JP Kanagawa; JP Kanagawa
- 代理机构： IPUSA, PLLC
- 优先权： JPJP2019-011676 20190125,JPJP2019-218938 20191203
- 主分类号： H01M10/48
- IPC分类号： H01M10/48 ; H01M10/0585 ; H01M10/42 ; H01M10/0525 ; H01M4/04 ; H01M4/139 ; H01M4/36 ; G01R19/165 ; H01M10/44 ; H01M10/0565
摘要：
A power storage system includes a power storage element; and a voltage detecting unit configured to detect an output voltage of the power storage element. The power storage element and the voltage detecting unit are formed by integrally forming structural materials of the power storage element and the voltage detecting unit on the same base material, without any point bonding portions formed by solder mounting.
公开/授权文献
信息查询
