Invention Grant
- Patent Title: Memory device and wear leveling method for the same
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Application No.: US16655510Application Date: 2019-10-17
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Publication No.: US11550709B2Publication Date: 2023-01-10
- Inventor: Wei-Chen Wang , Hung-Sheng Chang , Chien-Chung Ho , Yuan-Hao Chang , Tei-Wei Kuo
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06N3/08 ; G06N3/10 ; G11C7/10

Abstract:
A memory device includes: a memory array used for implementing neural networks (NN); and a controller coupled to the memory array. The controller is configured for: in updating and writing unrewritable data into the memory array in a training phase, marching the unrewritable data into a buffer zone of the memory array; and in updating and writing rewritable data into the memory array in the training phase, marching the rewritable data by skipping the buffer zone.
Public/Granted literature
- US20200319998A1 MEMORY DEVICE AND WEAR LEVELING METHOD FOR THE SAME Public/Granted day:2020-10-08
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