- 专利标题: Memory device and wear leveling method for the same
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申请号: US16655510申请日: 2019-10-17
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公开(公告)号: US11550709B2公开(公告)日: 2023-01-10
- 发明人: Wei-Chen Wang , Hung-Sheng Chang , Chien-Chung Ho , Yuan-Hao Chang , Tei-Wei Kuo
- 申请人: MACRONIX INTERNATIONAL CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06N3/08 ; G06N3/10 ; G11C7/10
摘要:
A memory device includes: a memory array used for implementing neural networks (NN); and a controller coupled to the memory array. The controller is configured for: in updating and writing unrewritable data into the memory array in a training phase, marching the unrewritable data into a buffer zone of the memory array; and in updating and writing rewritable data into the memory array in the training phase, marching the rewritable data by skipping the buffer zone.
公开/授权文献
- US20200319998A1 MEMORY DEVICE AND WEAR LEVELING METHOD FOR THE SAME 公开/授权日:2020-10-08
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